Gate-voltage dependence of the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors
نویسنده
چکیده
The gate-voltage dependence of the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors has been investigated in the linear and subsaturation regimes of operation. Analysis of experimental data for different transistors indicates that the noise spectrum is dominated by the channel noise rather than noise originated in series resistors. The obtained results shed new light on the noise origin and may lead to reduction of noise in GaN transistors.
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